super fast recovery diode RFN5B2S ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)power mold type. (cpd) 2)low switching loss 3)high current overload capacity ? construction ? structure silicon epitaxial planer ? absolute maximum ratings (tc=25 ?c) symbol limits unit v rm 200 v v r 200 v io tc=82c 5 a tj 150 ?c tstg ? 55 to ? 150 ?c ? electrical characteristics (tj=25 ?c) symbol min. typ. max. unit v f 0.90 0.98 v i r 0.01 10 a trr 13 25 ns thermal resistance rth(j-c) 12 c/w average rectified forward current reverse voltage repetitive peak reverse voltage ? taping dimensions (unit : mm) parameter conditions duty 0.5 direct voltage 60hz half sin wave,resistive load parameter storage temperature 60hz half sin wave, non-repetitive one cycle peak value, tj=25c junction temperature 40 a forward current surge peak i fsm conditions i f =5a v r =200v i f =0.5a,i r =1a,irr=0.25i r reverse recovery time junction to lead reverse current forward voltage rohm : cpd manufacture date jeita : sc-63 6.50.2 5.10.2 0.1 c0.5 1.50.3 5.50.3 0.1 2.30.2 2.30.2 0.9 0.75 0.650.1 1 2 3 0.50.1 1.00.2 9.50.5 0.8 min 2.5 0.50.1 2.30.2 0.1 cpd 1. 6 2.3 1.6 2.3 3.0 2.0 6.0 6.0 6.80.1 8.00.1 4.00.1 2.00.05 1.550.1 0 7.50.05 2.50.1 16.00.2 2.70.2 3.00.1 10.10.1 0.40.1 13.50.2 8.00.1 00.5 10.10.1 tl 1/4 2011.12 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RFN5B2S 0.001 0.01 0.1 1 10 100 0 200 400 600 800 1000 1200 1400 1600 1800 forward voltage v f (mv) v f - i f characteristics forward current:i f (a) tj=125 c tj=25 c tj=150 c tj=75 c 0.1 1 10 100 1000 10000 0 50 100 150 200 tj=125 c tj=25 c tj=150 c tj=75 c reverse current:i r (na) reverse voltage v r (v) v r - i r characteristics 1 10 100 1000 0 5 10 15 20 25 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz tj=25 c 800 900 1000 v f dispersion map forward voltage:v f (mv) ave:895.5mv tj=25 c i f =5a n=20pcs 1 10 100 reverse current:i r (na) i r dispersion map tj=25 c v r =200v n=20pcs ave:13.25na 100 110 120 130 140 150 ave:135.2pf ta=25 c f=1mhz v r =0v n=10pcs capacitance between terminals:ct(pf) ct dispersion map 2/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN5B2S 0 20 40 60 80 100 120 140 160 180 200 ave:112.5a 8.3ms i fsm 1cyc i fsm dispersion map its ability of peak surge forward current:i fsm (a) 0 5 10 15 20 25 30 ave:12.6ns tj=25 c i f =0.5a i r =1.0a irr=0.25 i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 1 10 100 1000 1 10 100 8.3ms i fsm 1cyc. 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 1 10 100 1000 1 10 100 time i fsm peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics 0 5 10 15 20 25 30 c=200pf r=0 no break at 30kv c=100pf r=1.5k ave 19.9kv electrostatic discharge test esd(kv) esd dispersion map 0 1 10 100 0.001 0.01 0.1 1 10 100 1000 rth(j - c) time:t(s) rth - t characteristics transient thermal impedance:rth ( c /w) 3/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RFN5B2S 0 2 4 6 8 0 2 4 6 8 10 d.c. d=1/2 sin( 180) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics 0 2 4 6 8 10 0 25 50 75 100 125 150 d.c. d=1/2 sin( 180) average rectified forward current:io(a) case temperature:tc( c ) derating curve (io - tc) t tj=150 c d=t/t t v r io v r =100v 0a 0v 4/4 2011.12 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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